| PART |
Description |
Maker |
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| SD2107DD |
-100 V, 5 ohm, P-channel enhancement-mode D-MOS power FET
|
Topaz Semiconductor
|
| RJK1003DPP-E0 RJK1003DPP-E0-15 |
N-Channel MOS FET 100 V, 50 A, 11 m
N-Channel MOS FET 100 V, 50 A, 11 m?
|
Renesas Electronics Corporation
|
| RJK1002DPP-E0 RJK1002DPP-E0-T2 RJK1002DPP-E0-15 |
N-Channel MOS FET 100 V, 70 A, 7.6 m
N-Channel MOS FET 100 V, 70 A, 7.6 m?
|
Renesas Electronics Corporation
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| NP40N10PDF NP40N10PDF-E1-AY NP40N10YDF-E1-AY NP40N |
100 V ?40 A ?N-channel Power MOS FET Application: Automotive
100 V ?40 A ?N-channel Power MOS FET Application: Automotive
|
Renesas Electronics Corporation
|
| 2SK3273-01MR |
N-channel MOS-FET
N-channel MOS-FET 70 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| NP100P06PDG-E2-AY NP100P06PDG-E1-AY NP100P06PDG-15 |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING P-CHANNEL POWER MOS FET
|
HIROSE ELECTRIC Co., Ltd.
American Bright Optoelectronics, Corp.
Renesas Electronics Corporation
|
| FAP-450 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五（巴西）直|4A条（丁）|47VAR
N-channel MOS-FET(500V, 0,38Ω, 14A, 190W)
N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
TOKO, Inc.
Fuji Electric
|
|
